submitnm SESPAPNO lname Expr1 3 2D.5 Miyazaki The observation of s 6 3A.3 Ribes Post breakdown oxide 8 3A.1 Ribes New insight into the 9 2F.1 Seifert Multi-cell upset pro 10 FA01 Kim Line-spike induced f 11 6B.2 Ishida A new insight into t 13 XT01 Li Comprehensive studie 17 3C.5 Abadeer A capacitance reliab 18 4D.1 Du Study of the erase m 20 2D.4 Yokogawa Prediction of early 21 4D.4 Janai Relaxation of locali 23 6A.5 Ng Failure mechanism st 24 MY01 Lue Study of incremental 25 MY02 Hsiao A study of SONOS cha 26 5C.5 Tega Impact of threshold 27 HK01 Rahim NBTI behavior of Ge/ 28 PC01 Huang Characterization of 29 MY03 Tsai A simulation study o 32 EL01 Hsu Mechanism of snapbac 33 3B.6 Dai Low voltage transien 35 2D.3 Suzumura Electric-field and t 37 CD01 Chen Effects of hot hole 38 2B.2 Aono A study of SRAM NBTI 40 3A.2 Liao A new on-state drain 41 6A.2 Kudo Analysis of Ni silic 44 5B.1 Herfst Kelvin probe study o 47 2D.1 Fischer TDDB robustness of h 48 4C.5 Hall Impact of via intera 50 MY04 Tsuji New degradation mode 51 PC02 Chen Effect of crystal-or 52 4C.3 Hau-Riege The effect of curren 53 NA01 Banno On-state reliability 54 4A.4 Sato Cathode electron inj 55 HK02 Sato Fabrication process 56 EL02 Lai High-robust ESD prot 58 EL03 Chien A gate-controllable 60 4F.3 van Soestbergen Electrical character 61 6A.3 Chen Characterization of 62 6A.4 Lin Electron energy loss 64 2B.5 Islam Mobility degradation 66 3C.3 Flynn Implementation of 2 67 2F.3 Gasiot Comparison of multip 69 PC03 Miura Degradation of relia 72 PI01 Kitazaki Novel characterizati 73 SE01 Tosaka Simultaneous measure 75 MY05 Park A novel method to an 76 EL04 Verchiani Electrothermal model 79 IT01 Aubel Comprehensive reliab 80 3B.2 Esmark Transient behaviour 82 2F.2 Nakauchi A novel technique fo 83 4E.1 Meneghini Degradation of blu-r 85 MY06 Hosotani Resistance drift of 87 4D.3 Hamamura Electron trapping ch 88 HK03 Aguilera Nanoscale effects of 89 PC04 Cheng A new device reliabi 90 HK04 Hirano Influence of pre-exi 91 5B.2 Czarnecki New insights into ch 92 4F.2 Yuan Impact of IC diffusi 93 SE02 Weulersse Investigation of the 94 IT02 Horsfall Influence of barrier 95 3B.5 Farbiz Modeling of majority 96 3C.2 Huard NBTI degradation: fr 97 IT03 Verrière Dielectric conductio 99 5A.1 Amusan Mitigation technique 100 HV01 Goyal Unique ESD failure m 101 5A.3 Warren Predicting neutron i 103 3A.5 Martinez New insight into tan 105 IT04 Doyen Use of bidirectional 106 6B.4 Padovani Statistical modeling 107 3B.1 Johnsson Non destructive ther 108 6B.3 Ghetti Physical modeling of 109 XT02 Du Physical framework f 110 EL05 Sarbishaei A darlington-based S 112 XT03 Ang Energy distribution 113 IT08 Smorodin Modeling and improve 114 HK05 Okada Roles of High-k and 115 2F.4 Cannon Multi-bit upsets in 116 2D.2 Chen Line edge roughness 117 4A.1 Xiong Constant voltage str 119 4B.3 Aoulaiche Negative bias temper 122 HK06 Kang Performance and reli 123 XT04 Yang New hot-carrier degr 126 HK07 Ryan Interfacial layer de 127 XT05 Guerin Novel hot-carrier AC 130 DI01 Marinella Charge bursts throug 132 5B.3 Kraft Passivation integrit 133 EL06 Lou A comprehensive comp 134 3B.3 DI SARRO A scalable SCR compa 135 PI02 Livshits Supply signal fluctu 136 SE03 Laird Picosecond laser mic 138 4B.2 Pae BTI Reliability of 4 140 6B.1 Ielmini Physical mechanism a 141 3B.4 Khazhinsky Study of Undoped Cha 142 FA02 Sheng Visualization and Da 143 4E.3 Chou Degradation Mechanis 144 5A.4 Narasimham Neutron and Alpha Pa 146 2F.5 Narasimham A Multi-bit Error De 147 2B.1 Brisbin Enhanced PMOS NBTI D 148 5A.2 Porter Soft Error Reliabili 149 5A.5 Slayman Comparison of Accele 151 4A.5 Rafik Contributions and Li 152 4A.3 Garros Impact of cristallin 153 3C.4 Lee A comparative study 154 FA03 Kendrick Reliability of NLDMO 155 HK08 Prasad Dielectric Breakdown 156 HK09 Shimizu Separation of fast a 157 MY07 Liu Hydrogen Distributio 160 4B.1 Heh Hole Trap during PBT 161 EL07 Marreiro Multi-Channel, High- 162 3A.4 Kumagai Statistical evaluati 164 4B.4 Wang Degradation of solut 167 PI03 Min Plasma induced damag 168 IT05 Matsuyama INVESTIGATION OF STR 170 4D.2 Mahapatra Nitride engineering 174 3C.1 Nigam Charge Loss Mechanis 175 6A.1 Isakov Scanning Near-field 177 2C.3 Chen Enhancement of Radia 178 XT06 Hu An Improved Methodol 179 1.4 Kaczer Ubiquitous relaxatio 180 IT06 Cheng Back stress model on 182 3C.6 Shih Scrubber clean proce 184 2B.4 Schlünder A novel multi-point 185 HK10 O’Connor Anomalous positive-b 186 1.5 Grasser An energy-level pers 187 5B.4 Tazzoli Suspensions shape im 188 4A.2 O’Connor SILC defect generati 189 5C.4 Ruberto A reliability-aware 190 MM01 van der Wel Hermeticity testing 191 5C.3 Stawiasz On-chip circuit for 192 PC05 Vassighi Characterizing infan 193 EX01 Chen Reliability assessme 194 2C.4 Chen A case study: Design 195 4E.4 Meneghini Combined optical and 196 4C.4 Oates Analysis and modelin 197 XT07 Lee Separation method of 198 EL08 Chatterjee 3D device modeling o 199 IT07 Oates Characterization of 200 2B.3 Campbell The Fast Initial Thr 201 PI04 Liu Impacts of process i 300 1.2 Tazzoli (ESREF Invited) Deve 301 2A.1 Richter (Invited) Semiconduc 302 2A.2 Kuo (Invited) Failure An 303 2A.3 Diebold (Invited) Metrology 304 2C.1 Schrimpf (Invited) Reliabilit 305 1.3 Kessenich (Invited) Bit error 306 5C.1 Porter (Invited) Reliabilit 307 5C.2 Mitra (Invited) Circuit Fa 308 4E.2 Jimenez (Invited) X-band GaN 309 2E.1 Allee (Invite) Degradation 310 2E.3 McMahon (Invited) Solar Cell 311 2E.2 Breeze (Invited) Next gener 312 2E.4 Pei (Invited) Nanostruct 313 2A.4 Groeseneken (Invited) Reliabilit 314 1.1 Duvvury (Invited) Paradigm S 315 4C.1 Thompson (Invited) Carbon Nan 316 4C.2 Nitta (Invited) Interconne 317 4F.1 Frear (Invited) Emerging R 401 2C.2 Chen Memory design for hi 402 EX02 McLain Analytical model of 403 EX03 Scheick Current leakage evol 405 3A.6 Suñé Failure-current base 406 4E.5 Lee Reliability assessme 408 5D.2 Haase An alternative model 415 5D.3 Varghese A comprehensive anal 416 5D.1 Butt Modeling Single Even 418 4C.2 Hau-Riege The effect of a widt